Growth of GaTe and GaTe:Cd semiconductors and the investigation of structural and optical properties of them and Schottky diode application

GaTe and GaTe:Cd binary semiconductors were grown by the modified Bridgman-Stockbarger method. The structural, morphological and optical characterizations of the semiconductors grown were performed by XRD, SEM, EDX, AFM and absorption measures, respectively. As a result of the XRD analyses, it was observed that GaTe and GaTe:Cd binary semiconductors had monoclinic structure; and as a result of Cd doping it was observed that peak intensities increased and that some peaks disappeared and that some peaks appeared. In order to determine the effect of annealing temperature on structure, the crystals grown were annealed in nitrogen gas environment at different temperatures (100, 200, 300, 350, 400, 500, 600 and 700ºC) and in determined periods (10, 20 and 30 min.) and just after annealing XRD analyses were done. For GaTe and GaTe:Cd semiconductors, atomic weight values that were obtained by EDX technique and the values that were calculated during grown and applied were in agreement with one another. The absorption measures of GaTe and GaTe:Cd binary semiconductors were in the range of 320-10 K and these measures were performed for each 10 K steps. The absorption coefficients and energy band gaps were calculated as a function of temperature for GaTe and GaTe:Cd binary semiconductors. Schottky diode was obtained from GaTe and Cd doped GaTe binary semiconductors. The current-voltaj measures of obtained diode were measured in dark environment as a function of temperature (25-360 K range). Ideality factor and barrier height that are important parameters for diode were calculated by analyzing measurements that taken.