The Temperature depent electron transport in Ge
2006
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Danışman: Yrd. Doç. Dr. Yasemin Çiftçi
Özet (EN)
In this work, the transport properties of Ge semiconductors were investigated.Temperature dependent conductivity, Hall mobility measurement in Ge semiconductorswere carried out at the temperature range 35-350 K. The studied samples show n-typeelectrical conductivity at high temperatures while they show n-type electricalconductivity at intermediate temperatures region. The activation energy and the bandgap have been calculated from the temperature resistivity measurement.Science Code : 202.1.147Key Words : Ge, Hall Mobility, electron transport, X-RayDifractionPage number : 69Adviser : Prof. Dr. Kemal ÇOLAKOĞLU
Yazar
Dr. Ümran Çolak
Bu Yayına Nasıl Atıf Yapılır
Ümran Çolak (Master Thesis). The Temperature depent electron transport in Ge, 2006, Gazi University.
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