Grafen tabanlı yüksek frekans elektroniği

Recent advances in chemical vapor deposition of graphene on large area substratesstimulate a significant research effort in order to search for new applications of graphene inthe field of unusual electronics such as macroelectronics. The primary aim of this work isto use single layer of graphene for applications of high frequency electronics. This thesisconsists of both theoretical and experimental studies of graphene transistors for the use ofradio frequency electronics. We have grown graphene layer using chemical vapordeposition technique on large area copper substrates. The grown graphene layers are thentransferred onto dielectric substrates for the fabrication of graphene transistors. Thetheoretical part of the thesis is focused on the understanding the performance limits of thegraphene transistor for high frequency operation. We investigate the intrinsic highfrequency performance of graphene field effect transistors using a self consistent transportmodel. The self-consistent transport model is based on a nonuniversal diffusive transportthat is governed by the charged impurity scattering. The output and transfer characteristicsof graphene field effect transistors are characterized as a function of impurity concentrationand dielectric constant of the gate insulator. These experimental and theoretical studiesshape the basis of our research on the graphene based radio frequency electronics.