Growth and characterization of group III-V nanostructures on Si substrates by MBE

Group III-V epilayers and nanostructures were grown on Si (100) substrates by molecular beam epitaxy. GaSb buffer layers on Si substrates to serve as a replacement of GaSb substrate for the Sb-based devices in the long term were investigated in terms of the surface roughness, crystal quality, defects and optical properties. Various growth treatments were carried out to enhance the GaSb epilayer quality and the obtained results were evaluated comparatively. In addition to the nominal substrates vicinal ones were used as well to minimize the common defects observed in lattice mismatch epitaxial growth. GaAs nanowires (NWs) on Si (111) substrates to be used as low dimensional functional devices were grown and the effect of growth parameters on the morphology of NWs were investigated in detail by electron microscopes. Throughout the study the grown samples were deeply analyzed by various characterization tools such as atomic force microscopy, high resolution X-ray diffraction, photoluminescence spectroscopy, scanning electron microscope and transmission electron microscope.