Interface states effect on the capacitance-voltage characteristics

A detailed study of the effect of interface states and series resistance in metal- insulator-semiconductor (MIS) solar cells has been done.The thicknesses of the samples are grown about 30Â thermally. Capacitance - voltage (C-V), and conductance-voltage (G-V) characteristics of Al-Si02-pSi metal-insulator- semiconductor (MIS) solar cells were made in the frequency range between 20 kHz and 1MHz at room temperature. The MIS type solar cells showed non- ideal behaviours with C-V characteristics. Consequently, series resistance was strongly frequency dependent and changed decrease with the increases of frequency. This non-ideal behaviour was attributed to an order of magnitude higher density of interface state density in the MIS solar cells. Science code : 404.05.01 Key Words : metal-insulator-semiconductor, non-ideal behaviours, series resistance, Schottky barrier Page Number :55 Adviser : Assist Prof. Şemsettin ALTINDAL