Design and characterization of two dimensional WSeTe materials

Two-dimensional (2D) materials are among the materials that have been studied much since the discovery of graphene. Although graphene shows superior electrical, thermal and mechanical properties, the lack of band gap has led to the discovery of new types of semiconductor materials. Among them, some of the transition metal dichalcogen materials (TMDC) show both the superior properties that graphene has and have a band gap that absent in graphene. These materials, which show layer-dependent properties, have an X-M-X Type (X; chalcogen, M;Metal) structure. Janus TMDC structures, a new type of material discovered in recent years, are of the X-M-Y type (X, Y; chalcogen) and show interesting physical properties. The most remarkable features that stand out in these materials are manifested by the electric field perpendicular to the surface by breaking out-of-plane symmetry. Studies on 2D TMDC Janus materials are usually theoretical and only MoSeS and WSeS materials have been produced so far by four experimental methods. Due to its interesting properties in 2D Janus materials, WSeTe has potential applications in multi-terminal switches, optical devices, electronic oscillators, information storage devices, thermal and chemical sensors. In this thesis, the WSeTe material, which was studied theoretically in the literature, was experimentally studied and characterized for the first time by us. As a first step, 2D WSe2 material was synthesized by chemical vapor deposition (CVD). Then, the synthesis of WSeTe material with inductively coupled plasma (ICP) and thermal telluration is aimed. Obtained experimental data were analyzed using characterization methods such as OM (Optical Microscope), SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), PL (Photoluminescence) Spectroscopy, and Raman Spectroscopy.