Electron and magnetotransport properties of InAlN/GaN based high electron mobility transistörs (HEMT)

Electron and magnetotransport properties of 5 different InAlN/GaN and InAlN/AlN/GaN/AlN structures were investigated in this study. Resistivities were measured at a temperature range of 30 ? 300 K, Hall mobilities and Hall carrier densities were measured at the same temperature range and magnetic fields between 0 ? 1.4 T. Two-dimensional and 3-dimensional conduction mechanisms were seperated using Quantitative Mobility Spectrum Analysis (QMSA) of magnetotransport measurement results. Results of Hall measurements and QMSA results were used to conduct scattering analysis and strain calculations separately and the differences were examined. Well width of the quantum well that the 2-dimensional conduction occured, roughness of the related interface where the conduction occured and the strain of the interface were calculated. Also, correlation length and deformation potential of samples were determined. Succesfull calculation of these parameters related with the sctructural properties will lead to produce samples which will have better electrical properties.