Characterization of InAs/GaSb TİP-II superlattices with current and capacitance measurements
2018
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Advisor: Doç. Dr. Mustafa Kulakcı
Abstract (EN)
In this thesis, electrical performance of InAs/GaSb type-II superlattice photodiodes operating in mid infrared region have been studied and analysed. Superlattices whose InAs, GaSb layers and interface thicknesses changing in a systematic way has been chosed for device fabrication. The electrical performances of the devices has been elaborately studied by means of temperature dependent dark current, capacitance-voltage and foto-capacitance measurements. And also using results of these measurements defects and defect levels in the superlattice structures has been depicted and discussed.
Author
Dr. Erdem Yıldırım
How to Cite
Erdem Yıldırım (Master Thesis). Characterization of InAs/GaSb TİP-II superlattices with current and capacitance measurements, 2018, Anadolu University.
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