Magnetoresistance measurement of thin film with hall effect technique

In this study, monolayer film of Ni81Fe19 which is 9 nm thickness has been grown on Si wafer with sputtering deposition technique. Firstly, the ±1.4 KG variable external magnetic field was applied to this sample at a constant temperature of 300 K. Decrease in resistance (3,90x10-5 - 3.83x10-5 Ω cm), increase in carrier density (1,29x1021 – 3,03x1021cm-3) and decrease in Hall mobility (1,24x102 - 5,29x101 cm2V-1s-1) were observed. Secondly, the 7,5 KG constant external magnetic field was applied between 20-300 K temperature, and following changes were observed; increase in the resistance (2,54x10-5 – 3,84x10-5 Ω cm), decrease in carrier density (2,99x1021 – 1,68x1021cm-3 ) and an increase in the Hall mobility (7,98x10 – 9,53x10cm2V-1s-1 ). It was observed that the same sample had higher resistance value (2,63x10-5 – 3,91x10-5 Ω cm) without a magnetic field. Finally, change in resistance was observed in the ±1,4 KG magnetic field range between 25-350 K temperature value. It was observed that the resistance decreased as the temperature increased due to the magnetic field. Keywords: Magnetoresistance, Carrier density, Mobility, Tiny Film, Hall Effect.