The defect analysis of solar cells basen InGaAs

Two InxGa1-xAs quantum well solar cell (QWSC) grown on (100) and (110) orientated GaAs substrates were prepared by Molecular Beam Epitaxy (MBE). The annealing effects on the structural properties of the QWSCs over different (100) and (110) orientated GaAs substrates were investigated by high resolution X-ray diffractometer (HRXRD) and the obtained structural properties for two samples were compared with each other in detailed. Primarily, in-plane and out of-plane lattice parameters were found using Vegard law with the analysis of XRD data. Then, Parallel X-ray strain (?||), perpendicular X-ray strain (??), misfit (?f), alloy composition (x), tilt angle values and dislocations of the samples were carried out. Using the determined strain parameters, a dynamical theory based calculations for these structural properties have done by using increasing temperatures bringing out relaxation mechanism; interdiffusion and favored migration.