Studies of I-V, C-V, DLTS on Schottky diodes based on InP

In this study, current-voltage (I-V), capacite-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements of Sn/p-InP and Au/n-InP Schottky barrier diodes (SBDs) that were prepared by using LEC grown p-InP and MBE grown n-InP semiconductor materials have been done in wide temperature ranges. From analizing of I-V measurements of Schottky barrier diodes it has been seen that when the values of ideality factors (n) decrease values of barrier height increase with increasing temperature. By analizing of C-V measurements, some parameters such as barrier height ( ? B) concentration of carriers (NA and ND) and Fermi energy level (EF) of SBD structure have been calculated. From analizing of DLTS measurement results in the Sn/p-InP SBD, one deep level that was located at Ev+0,31 eV position has been detected at temperature range of 80-400 K. This level has been interpretated as Zn-related defect level. Also two deep levels that were located at Ec-0,14 and Ec-0,70 eV have been detected from DLTS measurement results of Au/n-InP SBD structure at the temperature range of 100-340 K. This two defect levels have been interprated as phosphorus vacancy and mid-gap related defect, respectively. Experimental results show that inhomogeneous barrier height, interface states existence of series resistance have played an important role in the electrical characteristics of prepared Schottky diodes. Analising of recorded DLTS measurements in the Sn/p-InP and Au/n-InP SBD, this deep levels that were located at the forbidden band gap of semiconductor are interprated as effective defect levels.