InSb kızılötesi detektörlerin pasifleştirilmesi

Infrared detectors have wide range applications in both military and civilian life.One of the most commonly used infrared detectors is InSb detectors. InSb detectortechnology has been developing since 1950s. Fabricating p-n diodes todetect infrared radiation is a common way of constructing InSb detectors. Dueto high free carrier concentration at room temperature, InSb detectors need tobe cooled down to operate properly and usually liquid nitrogen is preferred forcooling. However, even at 77 K, tunneling and generation-recombination andsurface leakage are not negligible and these effects result in dark current. Improvingthe photo current-to-dark current ratio is the main goal in design andfabrication of InSb photo detectors. One way of decreasing the dark current ispassivating the exposed edges of the detector to reduce surface leakage current.Passivating the edges can result in decreasing in the surface leakage by eliminatingthe surface states (dangling bonds). Dielectric thin films like SiO2 and SiNxare commonly used for passivation. In this work, different sized detectors arefabricated and characterized by measuring I-V curves and spectral response. Differentapproaches are tested for passivation and a detailed comparison betweendetectors with different treatments is presented.