Investigation of structural, morphological, andoptical properties of Cu-Sn doped ZnO films by silar method

Due to its high permeability and abundance in nature, ZnO semiconductor is widely used in technological applications. ZnO nanocrystal is an alternative to other oxide materials because its structural, optical and electrical properties can be improved by adding appropriate doping. Doped and undoped ZnO thin films can be grown by different methods. In this study, FTO/ZnO, FTO/ZnO/Sn-Cu 1%, FTO/ZnO/Sn-Cu 2%, FTO/ZnO/Sn-Cu 3% doped films were obtained by using the SILAR method. The structural properties of the produced ZnO thin films were investigated depending on the additive concentration. The structural and morphological properties of the produced thin films were examined by X-Ray Diffraction Device (XRD), Scanning Electron Microscope (SEM) and UV-VIS spectrometry (UV-VIS). From the XRD anaysis, it was determined that the structure of the produced thin films changed from amorphous structure to polycrystalline structure as the Cu and Sn concentration ratio changed. From the SEM images, it was observed that the morphological properties of the produced thin films changed depending on the additive concentration. The band gaps of the produced thin films were determined by UV-VIS spectrometry. It was observed that the obtained results were compatible with the literature, and a change in the forbidden energy gaps as the doping ratio increased was observed