Investigation of thermoluminescence (TL) retrospective dosimetric properties of silicon carbide (sic) used in industry applications

During a nuclear accident or violent terror attack the dose measurement was not easily done at this moment because the data is not available to decide correct value of dose in the contaminated area. One of the alternative solution is by using retrospective dosimetry as a tool of accidental dosimetry for dose estimation. And many objects of the contaminated area are applicable as retrospective dosimeters. Although many electronic devices today are based on pure silicon substrates, a number of other substrates are used in various applications. SiC has been found to be widely useful as a substrate and wide band gap semiconductor in, high-temperature, high-frequency, and high-power electronic devices, as well as in short wavelength, radiation resistant optoelectronic devices. The aim of this study was to discuss the thermoluminescence (TL) properties of silicon carbide (SiC) used in industry applications for retrospective dosimetry purposes. Basic TL properties of these materials (e.g. dose response, heating rate, fading effect and reproducibility) have also been investigated.