Işık uyarımı altında indiyum nitratın burstein-moss etkisiyle kırınım indisindeki değişim

The band filling effect due to free carriers introduces a shift in the absorptionedge, which in turn modifies the refractive index of the medium through theKramers-Kronig relation. This is known as the Burstein-Moss effect. Based onthe full band pseudopotential electronic structure calculations, we demonstratethat Burstein-Moss effect will be crucial in the design of InN based lasers. Theprimary reason is the small effective mass and the strong nonparabolicity of theconduction band of InN where the shift in the absorption edge is more than0.5 eV for an electron density of the order of 10^19 cm^?3. On the other hand,for the case of valence band, the shift in the absorption edge is approximately0.04 eV. However due to high density of states at the edge of the valence band,also this shift becomes crucial since it opens intraband transitions in the medium.In the case of laser structures, the Burstein-Moss effect in both conduction andvalence bands needs to be considered. Furthermore, we take into account theband gap renormalization due to high free carrier concentration. For the case ofsemiconductor laser structures, which can be also considered as an n-p junction,we predict about 2% change in the refractive index for a wavelength 1.55 ?mat an electron-hole density of 10^19 cm^?3. When we compare photoexcited (i.e.,n = p) InN with n-type doped InN, in the former case the intraband transitionsin the valence band which is a result of gamma5 to gamma6 transition, partially cancelsthe Burstein-Moss effect. Our findings can also have direct implications for InNbased optical modulators.