Design and simulation of wideband microwave power amplifier of class J

Microwave power amplifiers are generally located before the antenna on the transmitter level in microwave systems. Different types of transistors are used in the designs of this type of power amplifier according to characteristics of the transistor. The design includes input and output stages. Matching circuits must be used in such designs. We use this matching circuits which provide to keep losses to a minimum level. The desired strengthening process is achieved with the least loss in this way. Power amplifier design has different features. These are output power, efficiency, power gain and bandwidth. Different matching circuits are used from GaAs transistors which work with low voltage to GaN transistors which require much higher power. Transistors are classified according to the conduction angle. Class J power amplifier which is a new class has been selected. CG2H40025 transistor of Cree brand was used with AWR simulation program in circuit design. DC I-V curve simulation was performed after the transistor was added in the AWR library. Matching circuits were used to obtain maximum gain and efficiency values. S parameters and design analysis were realised in AWR simulation program. As a result of the simulations, 70% efficiency and 12 dB signal gain were obtained at 2 GHz frequency level. As a result, 42 dBm output power, 70% efficiency and 1 GHz bandwidth values which are targeted were achieved in the single stage and two port microwave power amplifier. Thus, it has been shown that it can be used for mobile communication systems (LTE).