Undoped and doped (Sb) Ge single crystal growth, investigation of structural and optical properties

In this study, Ge doped and undoped single crystals grown by Czochralski (CZ) crystal growth techniques. (111) oriented grown of Ge single crystals structural and optical properties high-resolution X-ray diffraction (HRXRD), Fourier transform infrared spectroscopy (FTIR) and spectroscopic ellipsometry (SE) analysis methods were characterized. Undoped and Sb-doped Ge single crystals obtained w-2q X-ray diffraction pattern of the crystals from the HRXRD measurement was observed to have grown in the 111 orientation and lattice parameters were calculated. FTIR analysis showed that the optical transmittance in the range of 2-12 ?m is > 45% was observed.. By the method of analysis SE refractive index and forbidden energy gap of the crystals was calculated. According to these results, single crystals grown Ge lens or optical window for use in infrared systems have proved to be suitable.