Production of SnO2 thin films by chemical vapor deposition method

In this study, SnO2 coatings on Si wafer, coated by Chemical Vapor Deposition ( CVD) method, as an alternative negative electrodes for li-ion batteries were investigated. Si wafers which is selected as a substrate material were immersed in acetone for 5 min. and than cleaned with methanol. Cleaned Si wafers were put in the oven and the temperature was set. SnO2 thin films which coating on Si wafer were fulfilled 400, 450, 500, 550oC temperature and 150, 450, 750 sccm O2 flow rates by CVD. After SnCl2.2H2O (10 g.) salt was melted of 250oC temperature, was dragged at 400-550oC temperature in the oven different flow rates by the help of O2. SnO2 thin films coating were carried out as 15, 30 and 45 minutes. When the temperature and deposition time were increased, thickness and the grains size of SnO2 thin films were increased. Conductivity of thin films were increased by the time deposition thickness was increased. Contrary to this, resistivity was decreased. Stable SnO2 thin films acquired at the 450oC, for 30 minutes deposition time and 450 sccm oxygen flow rates. SnO2 thin films which coating on Si wafer were investigated by XRD, SEM AFM and Four probe conductivity equipments.