Cd/CdS/p-Si/Al structure using of the CdS thin film obtained with spray pyrolysi̇s method

In our study, prepare a master's thesis, as p-type crystalline Si substrate was used. Omic contact was performed by evaporating Al metal on the matt surface of crystal. On the other surface of it CdS thin film were enlarged with the technique of Spray Pyrolysis. Structural characteristics of the grown thin film was examined SEM image. When examining SEM image of CdS thin film were totally covered the p-Si crystal surface of it was nearly homogeneous. By using absorbtion measurements of the CdS thin films energy bandgap were calculated as 2.29 eV. On the CdS films whose surface features were investigated, at 10-7 torr pressure was obtained Cd/CdS/p-Si/Al sandwich structure by evaporating Cd. Firstly, the current-voltage (I-V) characteristics on 80K between 300K and capacitance-voltage (C-V) characteristics at room temperature of the this structure was measured. In the calculation of diode parameters from I-V characteristics, Thermionic Emission, Norde and Cheung methods were used. The calculated parameters with different method were compared with each other. The C-V measurements of the Cd/CdS/p-Si/Al sandwich structure were obtained at room temperature at 50kHz, 100kHz, 300kHz, 500kHz and 1000kHz. From reverse bias C-2-V graphics diffusion potentials, Fermi energy level and barrier heights values were obtained. Consequently, it was seen that CdS thin film grown on p-Si semiconductor will be used confidently in Cd/p-Si metal-semiconductor contacts thanks to Spray Pyrolysis method.