Küçük uydular için Ku band mikroşerit yama anten dizisi ve düşük gürültülü kuvvetlendirici tasarımı ve gerçeklemesi

This dissertation is concerned with both investigation of a well-characteristic microstrip array antenna which is specially designed with three slits with ground plane structure and a high-gain wideband low noise amplifier (LNA) which are appropriate for the Ku-band application to fulfil the demand of radar, satellite, and communication. This thesis is divided into four parts. First part is a short and brief introduction about the works and designs that have been done in order to realize the design in the desired band frequency for small satellites. The second part deals with the theory behind Ku-band slotted rectangular patch array design. For designing this array patch antenna, firstly unit patch element over a Taconic TSM-30-0600-C1/C2 (εr=3) with the height of 1.52mm. Obtained single element radiation pattern is directional with good amount of radiated power with negligible backward radiation. The 3D radiation pattern shows maximum power flowing in the z-direction (Ѳ=0⁰). After simulation, the single element antenna has about 7dBi gain and linear polarization at = 90⁰ degree direction and 10dB back lobe ratio has been achieved. Then 2×2 array structure is developed by using array feed circuit. Dimension of array antenna is 16mm × 18 mm and feed of array antenna combines with 100Ω and 50Ω T-junctions over Taconic-TSM substrate with the height of 0.76mm on the reverse top side layer. For 2×2 array antenna, maximum measured gain of 10.9 dBi has been achieved in 11.9 GHz to 12.9 GHz band frequency. Furthermore, for array antenna, linear polarization is at  = 90⁰ degree direction. The third part is related to LNA design. In this contribution , single transistor LNA by utilizing bias and matching networks which are modeled in AWR, has been designed and simulated at Ku-band for the potential employment in the satellite RF subsystems. Substrate used is Rogers material (εr=3) and thickness of substrate and metal are H=0.762 mm and t=17.5 µm ,respectively. The design employs an N-CHANNEL HJ-FET transistor from NEC, NE3511S02. Designed LNA has ~10.5dB peak gain and 1.5dB NF.