The temperature dependent electron and magneto transport properties in Te doped n-Type InSb grown by LEC

THE TEMPERATURE DEPENDENT ELECTRON ANDMAGNETO TRANSPORT PROPORT ES N Te DOPED n-TYPE InSbGROWN BY LEC(M.Sc. Thesis)Ümit YURDUGÜLGAZI UNIVERSITYINSTITUTE OF SCIENCE AND TECHNOLOGYDecember 2005ABSTRACTResistivity, magnetoresistivity and Hall effect measurements in n-type Te-dopedInSb grown by the LEC technique were carried out as a function oftemperature (14-350 K) and magnetic field (0-1.35 T). The measurement resultsare analyzed using the conventional and quantitative mobility spectrum analysismethods. It is found that the impurity levels arising from LEC technique andintentionally dopants have a strong influence on both the electron and magnetotransport properties. The temperature dependence of the magnetoresistivitycoefficient shows an overall increase by representing two minima as thetemperature decreases. These minima are associated with two types ofimpurities.Science Code : 202.1.147Key Words : InSb, Hall mobility, QMSA, Electron Transport,MagnetoresistivityPage Number : 77Adviser : Doç. Dr. Mehmet KASAP