Production of semiconductor materials based metal oxide and investigation of their electrical properties

This thesis study has been included the structural and semiconducting properties of semiconductor materials based on Zinc oxide and Cadmium oxide prepared by Sol Gel method. The ZnO and CdO samples have been doped by Al and Fe dopants. The structural, electrical and optical properties of the samples prepared have been characterized by X-ray diffraction, Atomic Force Microscopy, optical absorption method and electrical measurements. The obtained XRD results indicate that the undoped-doped ZnO and CdO samples have the hexagonal structure and cubic structure, respectively. The grain size for ZnO and CdO samples was calculated from XRD results and it was found that the grain size changes with Al and Fe metal dopants. The surface analysis of the samples was determined by Atomic Force Microscopy. The surface morphology, mean size, area and volumes of the grains of prepared samples were evaluated by AFM. The optical band gaps of the samples were calculated using optical absorption method. The optical results show that the ZnO and CdO samples have direct band gap nature. Al and Fe dopants change the optical band gap of the samples. The electrical conductivity of the samples was also measured as a function of temperature. The electrical conductivity of the samples increases with increasing temperature and this confirms that the undoped-doped ZnO and CdO samples have the semiconducting behaviour.