Fabrication, characterization and application of thin insulator films for metal-insulator-metal and metal-insulator-semiconductor devices

In high frequency electronics and GHz-THz regime energy conversion applications, tunneling mechanism-based devices have high significance. To achieve high tunneling probability, insulating layers in these devices should be produced under 10 nm thicknesses; that, though, brings several obstacles whence prevent their widespread usage. In this work, information was given on what those problems are and how they ought to be measured. Simulation for understanding the mechanism of these devices was performed. Problems induced by material itself and its presence inside the structure of the device were explained; fabrication deficiencies and device characteristics were investigated; with efficient devices, energy harvesting application in GHz regime was prepared. While solutions were suggested on fabrication problems to widen the tunneling diode usage, a new device concept was presented.