Capacitance properties of Schottky barrier at metal-semiconducter contacts

In this study; We have prepared Au/n-GaP Schottky diodes in the (100)orientation, with the thickness of 300µm, S-doped obtained by metalevaporating system. Both current-voltage (I-V) and capacitance-voltage (C-V) characteristic were measured in the temperature ranges of 80-375K. Theevaluation of the experimental data , barrier height of the Schottky diodesand ideality factory, series resistance were calculated. Due to inhomogeneities of barrier height at the interface observed Gaussiandistribution. The mean barrier height and standard deviation valueobtained from the Gaussian distribution are 0.96 eV, 0.0998V, respectively.From the evaluation of the experimental I-V data, the barrier heightincreased and ideality factory decreased with increasing temperature.Tunnelling factory were obtained effected the current transport atinterface. Barrier height is founded decreasing with increasingtemperature from the C-V measurement.