The investigetion of frequency and temperature dependence of electrical characteristics of metal-semiconductor Schottky diodes

In this study, the frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/w-V) and the temperature dependent current-voltage (I-V) characteristics of the Au/n-GaAs metal-semiconductor (MS) Schottky diodes were investigated in the frequency and temperature ranges of 1 kHz-1 MHz and 300-400 K, respectively. According to thermionic emission (TE) theory, the electrical parameters as the ideality factor (n), zero bias barrier height ( ? Bo) and interface state density (Nss) of these diodes were calculated from their experimental I-V measurements. Also, from ? Bo versus q/2kT plot was obtained the values of the mean barrier height and standard deviation at zero bias as 0.912 eV and 0.132 V for, respectively, Thus, from the modified [ln(Io/T2)-q2 ? o2/2k2T2] versus q/kT plot was obtained the values of and A* as 0.914 eV and 8.317 Acm-2K-2, respectively.