Electrical and optical characterization of memristive behavior in metal ZnO ve ZnO1-x metal structure

In this study, appropriate methods and parameters were determined using DC magnetron sputtering technique to obtain ZnO and ZnO1-x structures. The band-gap energy of the obtained thin film structures was found as 3.2 eV with optical absorption measurements. The band-gap energy of ZnO thin films have also been confirmed by photoluminescence spectroscopy. It was determined that the diffraction patterns were compatible with ICSD 01-075-0576 database belonging to ZnO with XRD technique. The structural characterization is completed by depth analysis with SIMS method. The PVD method was used to achieve Al and Ag metallization. The Al/ZnO/Al and Al/ZnO/ZnO1-x/ZnO/Al memristor devices which would be characterized were fabricated. The memristive behavior of the fabricated devices were inspected by electrical characterization. It was observed that the electrical and optical characterizations of ZnO and ZnO1-x structures prepared in Metal / Metal Oxide / Metal form have been related to memristive behavior.