The investigetion of frequency and temperature dependence of dielectric properties of MIS structures

The frequency and temperature dependence of dielectric properties such as dielectric constant ( ? '), dielectric loss ( ? "), dielectric loss tangent (tan ? ), ac electrical conductivity ( ?? c), real and imaginary part of electric modulus ( ? ' and M") of the Au/SnO2/n-Si (MIS) structures have been investigated in the frequency range of 100 Hz-1 MHz and temperature range of 100-400 K by using experimental capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. Experimental results show that both electrical and dielectric parameters were strongly frequency and temperature dependent. The ?' and ?'' were decreasing with increasing frequency while increasing with increasing temperature. Also, the ac electrical conductivity increases both with increasing frequency and with increasing temperature. The interfacial polarization can be more easily occurred at low frequencies, and the number of interface states density between semiconductor/insulator interfaces, consequently, contributes to the improvement of dielectric properties of MIS structure.Key Words : MIS structures; Dielectric properties; Frequency andtemperature dependence; Electrical conductivity