Characterization of deposited Pd-Zr thin films by moleculer beam epitaxy

Molecular beam epitaxy is also used for the deposition of some types of semiconductors. MBE (molecular beam epitaxy) techniques allow the epitaxial growth of different compounds.In this study, thin films of Pd-Zr alloys have been manufactured by MBE techniques and the grain growth and phase changes have been analyzed due to the heat treatment processes. The thin films of Pd-Zr alloy have been deposited onto Si wafers. After pre heating of Pd80-20Zr, Pd81-19Zr, Pd83-17Zr and Pd85-15Zr thin films at 60°C for 1 hour, heat treatment processes we made at 400°C and 800°C for 24 hours.The characterization of the manufactured thin films before and after heat treatment processes have been performed by scanning electron microscopy (SEM), X-ray diffractometer (XRD) and EDX analyses.