The investigation of capacitance-voltage (C-V) and conductivity-voltage (G/W-V) characetrsitics depend on frequency and radiation in MOS structure

In this study Au/Sn02/n-Si MOS structure was made, by top of n-Si semiconductor with evaporation technique ohmic and rectifier contacts, with spray technique insulator Sn02 layer is formed between metal layer and semiconductor layer. Our aim is to analyse Au/SnOz/n-Si structure some basis physical parameters by the changing frequency and radiation. Au/SnOt/n-Si (MOS) structure C-V and G/w-V measurements for different frequency were made at room temperature. From these measurements we calculate structure serial resistance, excess capacitance and interface state density by frequency. After than with the Co60 radiation source in different doses we made same measurement and calculations. Result shows that in experiments this structure almost all physical parameters change by interface state density, dc voltage, frequency and radiation.Key Words : MOS structure, interface states, serial resistance, effects of frequency and radiation