Investigation of vanadium oxide thin films for dielectric applications of MOS structures

In this study, V3O7 and V8O15 thin films were coated on glass and p-Si semiconductor surfaces by sol-gel dipping method; Surface structure was investigated by AFM, polycrystalline orientation and crystal structure of the films were examined by XRD. Film content was investigated with EDX. Optical properties were investigated by UV-VIS measurements. Al / p-Si / VOx / Al MOS structures were obtained from the obtained films then electrical and physical properties were examined by current-voltage, capacity-voltage-frequency methods. In order to obtain thin films, 99% pure V2O5 powder was dissolved in different combinations of HCl, HNO3, H2O2 solvents. After homogeneous solutions were obtained glass or p-Si surface to be coated was dipped into this solution at 600 m / s. The coated surface was exposed to annealing at 300 degrees for 5 minutes. After the 10th layer coated film annealed for 1 hour at a temperature between 400 and 500 degrees. In order to obtain MOS structures, p-Si substrate were coated with Al by evaporation technique. The other side of the film firstly coated by VOx by the same technique above the film was then coated with Al using a mask.