Using nano-structured metal oxide semiconductor production of photo diodes

In this thesis, undoped and doped CdO and ZnO films were prepared by sol gel method to fabricate the metal oxide semiconductor based photodiodes. The CdO and ZnO films were grown on the glass substrates using spin coater method. The absorbance transmittance, reflectance of prepared ZnO and ZnO films were measured to determine their optical band gaps. The structural properties of the films were investigated by X-ray diffraction and atomic force microscopy techniques. The XRD results confirm that the ZnO and CdO films have the polycrystalline.The electrical characterization of prepared Al/p-Si /CdO/Al and Al/p-Si/ZnO/Al diodes were performed by current-voltage characteristics, phototransient current measurements, and capacitance-voltage and conductance-voltage techniques. The electrical parameters and interface properties of the diodes were changed with the content of Al and Ni dopants.The photoresponse and rectification properties of Al/p-Si/CdO/Al Al/p-Si/ZnO/Al photodiodes were changed by depending on the content of dopant. The Al/p-Si/CdO/Al and Al/p-Si/ZnO/Al diodes indicate the best photosensivity for 0.1 % Al and Ni dopants.It was found that the photoresponse properties of the Al/p-Si/CdO/Al Al/p-Si/ZnO/Al diode can be improved using various metal dopants.