Tempereture dependent investigation of electrical and optical properties of micro cavity lasers' active region alloys for fiber optic comunications

In this work electrical and optical properties of AlGaAs, GaInNAs and InGaN's mikro cavity laser alloys for fiber optik communication are studied. Effect of quantum well possition to vertical electrical transport, influence of modulation doping on band gap and the effect of In concentration to alloy properties are investigated for AlGaAs, GaInNAs and InGaN alloys, respectively. Results show that relative position of quantum well to substrate is affecting vertical transport in AlGaAs alloys and modulation doping efficiently decreases unwanted effects of trap levels exist in GaInNAs. In concentration is found to red shift the band gap of InGaN and increases the density of states at conduction band edge. KEY WORDS: Fiber optic communication, Micro cavity lasers, Narrow band gap alloys