Fabrication and characterization of OMC/p-Si heterojunction diode with an organometallic complex (OMC) interlayer

In this study, the electrical characteristics of Al/p-Si diode and the Al/OMC/p-Si diode with an organometallic thin film (OMC) interlayer were examined, focusing on the effect of the interlayer on the diode's electrical properties. For this purpose, current-voltage and capacitance-voltage measurements were conducted, as well as the examination of the photovoltaic properties of the diodes under 100 mW/cm² light intensity. The ideality factor (n), barrier height (ΦB), and saturation current (I0) of both Al/p-Si and Al/OMC/p-Si diodes were calculated. The rectification ratios of the diodes in the dark at ±2 volts were computed. The light sensitivity of the diodes was determined. The results demonstrate that the presence of the OMC interlayer modifies the electrical parameters of the diodes and enhances their photosensitivity under light exposure. These findings indicate that the OMC interlayer plays a significant role in improving the optoelectronic performance of the diodes.