Production and characterization of p- Co3O4/ n- In2O3 heterojunction diode

In this study, p-Co3O4/ n-In2O3 heterojunction has been fabricated on FTO coated glass substrates. Cobalt oxide p-type layer has been produced by chemical bath deposition and ultrasonic spray pyrolysis methods. In2O3 n-type layer has been produced by ultrasonic spray pyrolysis method. Structural and morphological properties of the samples were investigated via x-ray diffraction and field emission scanning electron microscopy, respectively. The optical band gap of the films was determined using the UV-Vis-NIR absorption spectra. The optical parameters of the films such as dielectric constants (n, k, ε1 ve ε∞), plasma frequency ωp and carrier density Nopt were evaluated by the envelope method. The FTO/ p-Co3O4 / n-In2O3 heterojunction structure has been produced by the ultrasonic spray pyrolysis method and it is determined that the structure has showed non-ideal diode behaviour. From the current-voltage characteristic, ideality factor (n), barrier height (𝜙𝑏), saturation current (I0) and series resistance (Rs) values of the diode have been determined. Keywords: Cobalt oxide, Indium oxide, Chemical bath deposition, Ultrasonic spray pyrolysis, FTO/ p-Co3O4 / n-In2O3 heterojunction diode