Production of ZnO:Al2O3 thin films by RF magnetron sputtering method and characterization

In this study, Al2O3 doped ZnO thin films were deposited on silicon substrates at 200°C by RF magnetron sputtering method. The thin films deposited at different Ar/O2 rates were annealed in vacuum and oxygen ambient by rapid thermal annealing (RTA) system during 1 minute. During deposition the change in argon-oxygen rate and annealing ambient and temperature of thin films on structural, optical and surface properties were investigated by XRD, PL and AFM methods. Crystal grain size, lattice parameter, full width at half maximum (FWHM) values and crystallographic analysis of ZnO: Al2O3/n-Si structure was carried out by x-ray diffraction method. Optical properties of prepared samples were investigated with the help of photoluminescence (PL) spectroscopy. Atomic surface structure and surface topography were measured by atomic force microscopy (AFM) method. According to optical and structural properties, the optimum deposition and annealing conditions of deposited ZnO: Al2O3/n-Si thin films were determined. The experimental results of prepared thin films were compared with before and after annealing procedure and it was concluded that the annealing procedure has positive effect on prepared samples.Key Words : ZnO, RF magnetron sputtering system, X- Ray, AFM, Annealing, Optical and structural properties,