Electrical and photovoltaic characterization of pd/n-si schottky solar cells with plain and methyl red organic interface obtained by sputtering method

In this thesis, a thin organic film layer was applied to the surface of the n-Si semiconductor, which was smoothened by dropping the solution prepared by adding methyl red organic crystal material to the chloroform solvent, onto the shiny surface of the n-Si semiconductor and by etching with KOH, HF, HCl and H2O2 chemical solvents, using the Spin Coating method. covered. After ohmic contact was made with Ag and Al materials by thermal evaporation technique on the matte surface of the n-Si semiconductor, it was annealed in the annealing oven at 585 oC for 3 minutes to provide better results. The fabrication of the devices was completed by creating Schottky contacts using Pd and Au metals, sputtering method, using 5 mm and 1 mm diameter masks, respectively. Measurement was made in a dark environment at a temperature of 298 K. From the slopes of the ln I-V graphs obtained, the characteristic Schottky diode parameters, ideality factor (n) and barrier height (b); 1.70, 0.70 eV for the reference Au/Pd/n-Si/Al/Ag sample, 1.37, 0.68 eV for the Au/Pd/MK/n-Si py/Al/Ag sample and 1.37, 0.68 eV for the Au/Pd/MK/n-Si ay /Al/Ag was calculated as 1.82, 0.76 eV for the sample, respectively. In order to examine the photovoltaic performance of the fabricated devices, solar energy efficiency (Ƞ), load factor (FF), short circuit current (Isc), open circuit voltage (Voc), maximum voltage under different light intensities (30-100 mW/cm2) were used with the solar simulator. Solar cell basic parameters such as power (Pm) were calculated. From the semi-logarithmic I-V graphs, it was observed that the current values increased as the light intensity increased in the reverse feed region, which meant that the Schottky diode had solar cell properties. The fact that photodiode devices cut the voltage on the positive side under light means that the device exhibits photovoltaic properties. The surface morphology of Schottky solar cells was examined with the SEM device and it was determined that the interfaces of the samples were covered with organic material in certain thicknesses in a near-homogeneous distribution and the presence of an organic material at the interface was clearly detected.