Investigation of Si(111)- (7x7) surface at different temperatures with STM
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Abstract (EN)
In this work, by means of Scanning Tunneling Microscopy ( STM) we studiedthe surface evolution of Si (111) 7x7 at different temperatures (25â¦C, -155â¦C ve327â¦C) . We used tungsten electrochemically etched tips. The sample was heatedby passing a dc electric current through it, and cleaned by flashing at 1250 ºC2x 10 â10 mbar. We measured the sample high temperature with anbelowinfirared pyrometer. Si(111)-(7x7) reconstructured surface was prepared bydirect current heating. The STM results are compared with the experimentalfindings.
Author
Can Alaşalvar
How to Cite
Can Alaşalvar (Master Thesis). Investigation of Si(111)- (7x7) surface at different temperatures with STM, 2006, Gazi University.
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