Ivestigation of electrical characteristics of Cu/CuS/n-GaAs/In structure obtained by SILAR method depending on sample temperature

In the master thesis study, CuS thin films were growth on n-GaAs and glass substrates with SILAR technique. Optical and structural properties of the CuS thin film, grown on n-GaAs and glass substrates were investigated with XRD, SEM and UV-Visible absorbtion techniques. Band gap of CuS thin film was calculated as 2,05 eV using optical absorbtion measurements. When the XRD analyzes were examined, it was seen that the CuS film was in polycristalline structure. CuS thin film was growth on the surface of the n-GaAs semiconductor and Cu/CuS/n-GaAs/In structure was obtained after Cu metal was evaporated under the 10-5 torr pressure. Then this structure is obtained, diode parameters such as ideality factor, barrier height, and series resistance were calculated by using Thermoionic Emission, Norde and Cheung Method from forward bias I-V (current-voltage) graphs at 100 K- 200 K- 300 K temperature values. In room temperature barrier height, Fermi level, donor concentration and diffussion potential values were calculated from the C-V (Capaticance- Voltage) and C-2-V graphics dependinyon frequency. The same calculations were made for the values of 100 K and 200 K the temperature at the frequency of 500 kHz. While the application voltage was increased in reverse bias, it was observed that the capacitance rapidly decreased. The rectification raito was calculated by proportion current value in the case of forward bias towards current value in the case of reverse bias. As a result of these calculations, it was observed that the best rectification ratio was at a temperature of 100 K. Interface states (Nss) for Cu/CuS/n-GaAs/In structure have been calculated at 100 K- 200 K- 300 K sample temperatures.