Electrical characterization of silicon based organic-inorganic diodes

In this work, organic (CuPc, C60) and inorganic (ZnO, CdO) films and heterojunction diodes were fabricated on n-Si and p-Si substrates with ohmic contacts, using sol gel spin coating method and thermal evaporation techniques. From the XRD patterns of the inorganic films, it was seen that films have polycrystalline nature. Structural parameters (grain size, lattice parameters, texture coefficients) have been calculated. The surface morphologies of the films have been investigated from FESEM images. It was seen that all the films completely covered the surface of substrates. Grain sizes of the films are calculated from the FESEM images. Temperature dependent I-V characteristics of fabricated heterojunction diodes have been investigated. From the calculations the current-conduction mechanisms of the films have been investigated. From the I-V results the ideality factor (n), barrier height ( ), saturation current (I0) and series resistance (Rs) of diodes have been calculated. In addition, to investigate sensitivity to light of diodes, the I-V characteristics of diodes at different light intensities were investigated. The photodiode measurements of diodes have been carried out and the results have been investigated.