Opti̇cal properti̇es of Ga3+ and Eu2+ doped SnO2/ZnO thi̇n fi̇lms prepared by sol-gel method

This thesis was formed in two sections. The first section included SnO2/ZnO thin film and firstly optical and structural properties and secondly electrical properties of the film are investigated. In the second section the dates which were obtain from SnO2/ZnO film, used to produce co-doped (Al-Ga, Al-Eu, Al-Sn) zinc oxide tin films. The films were produced different amount of dopant and monoethylenamine (MEA).In the first section of production zinc precursor was solved in solvent, which has different amounts of Sn dopant, to obtain desired doping concentration, and MEA, to stabilize the sols, added to solutions. In the second section of production zinc precursor was solved in solvent, which has different amounts co-dopant, to obtain desired doping concentration, and different ratio of MEA, to stabilize the sols, added to solutions. The prepared solutions were mixed with magnetic stirrer and waited over 24 hours. The solutions were used to coat cleaned glass substrates by spin coating method. Each film was coated six and ten times onto glass substrates and dried at 300 oC for 10 minutes after each coating. Obtained films were sintered at 500 oC and for 2 hours. The X-Ray Diffraction (XRD), photo spectroscopy scanning electron microscopy (SEM) and electrometer used to examine the microstructure, optical and electrical properties of the films.