Fabrication and electrical characterization of Cr:CuO/n-Si photodiodes

In this study, undoped and Cr-doped CuO thin films were deposited on n-Si substrates by sol-gel spin coating method. The CuO/n-Si (CC1), Cu0,75Cr0,25O/n-Si (CC2), Cu0,50Cr0,50O/n-Si (CC3), Cu0,25Cr0,75O/n-Si (CC4), CrO/n-Si (CC5) diodes were fabricated by using these thin films. The I-V characteristics of the fabricated diodes were investigated in the dark and under a light intensity of 100 mW/cm2 conditions. The ideality factors (n), barrier heights (ΦB) and rectification ratios (RR) of these diodes were computed and tabulated. The Norde function was used to calculate the series resistances of the fabricated heterojunctions. Capacitance-voltage (C-V), conductance-voltage (G-V) and series resistance-voltage (Rs-V) characteristics of the produced diodes were examined in the frequency range of 10kHz-1MHz. In addition, the electrical parameters of these structures such as Nd (cm3), Vbi (eV), Nc (cm-3), Ef (eV), Փb(CV)Ev, Wd (nm), ∆Փb (eV) ) and Emax (V/cm) were obtained by using C-2-V graph at 1 MHz frequency.