Temiz Si(001)-(2x1) yüzeyi ve üzerine eşörgüsel Ge tabakası büyütülmüş Si(001)-(2x1) yüzeylerinin TTM/ temassız AKM eşzamanlı kullanılarak incelenmesi

Abstract SIMULTANEOUS STM/NC-AFM INVESTIGATION OF CLEAN SI(001)-(2 x 1) SURFACE AND GE EPITAXIAL GROWTH ON SI(001)-(2 x 1) Mehrdad Atabak M. S. in Physics Supervisor: Asst. Prof. Ahmet Oral September 2001 In this thesis work, a combined Scanning Tunnelling Microscope and non- contact Atomic Force Microscope -STM/ncAFM- is used to investigate clean Si(001)-(2 x 1) and Ge epitaxial growth on Si(001)-(2 x 1) surfaces. The STM/nc-AFM and Ultra High Vacuum system (UHV) in which the microscope is installed, are also described. The capability of our new microscope to image the clean Si(001) and Ge epitaxial growth on Si(001) and force-distance spectroscopy on Si(001) is demonstrated. Keywords: Ultra High Vacuum, Scanning Tunnelling Microscopy, Atomic Force Microscopy, Force-Distance Spectroscopy, Epitaxial growth. u