Temperature dependent electrical characterization of NiO/n-Si heterojunction

In this study, it was aimed to obtain NiO/n-Si heterojunction and determine its temperature dependent electrical properties. For this aim, NiO thin films were growth on an n-Si semiconductor and a glass by radio frequency (RF) reactive sputtering technique. High purity Ni was used as target and oxygen was used as reactive gas. Au metal was evaporated to obtain front contact. Temperature dependent electrical parameters of Au/NiO/n-Si heterojunction were executed its current-voltage (I-V) measurements between 305 and 480 K in dark. It was seen that electrical parameters such as ideality factor, barrier height and series resistance were strongly sensitive to temperature. Furthermore, optical properties of thin film on a glass were analyzed by means of uv-vis data.