Temperature dependent electrical characterization of NiO/n-Si heterojunction
2015
0 görüntülenme
0 i̇ndirme
Danışman: Doç. Dr. Ömer Çelik
Özet (EN)
In this study, it was aimed to obtain NiO/n-Si heterojunction and determine its temperature dependent electrical properties. For this aim, NiO thin films were growth on an n-Si semiconductor and a glass by radio frequency (RF) reactive sputtering technique. High purity Ni was used as target and oxygen was used as reactive gas. Au metal was evaporated to obtain front contact. Temperature dependent electrical parameters of Au/NiO/n-Si heterojunction were executed its current-voltage (I-V) measurements between 305 and 480 K in dark. It was seen that electrical parameters such as ideality factor, barrier height and series resistance were strongly sensitive to temperature. Furthermore, optical properties of thin film on a glass were analyzed by means of uv-vis data.
Yazar
Dr. Savin Haji Omar
Kurum
Bu Yayına Nasıl Atıf Yapılır
Savin Haji Omar (Master Thesis). Temperature dependent electrical characterization of NiO/n-Si heterojunction, 2015, Dicle University.
Anahtar Kelimeler
Lisans
Tüm Hakları Saklıdır
Bu eser belirtilen lisans koşulları altında paylaşılmaktadır.
Dicle University tezlerinden daha fazlası
- Resilience based design of rc buildings using seismic fragility analyses and a novel wall model(2023)
- The role of financial architecture and institutional structure in growth and development: The example Diyarbakır(2023)
- Determination of neuromarkers associated with dementia using EEG and machine learning(2023)
- Forensic medical examination of earthquake victims admitted to Dicle universi̇tesi Medical Faculty Hospitals as a result of the 6 february 2023 Kahramanmaraş centered earthquakes(2024)
- STEAM in geography education and sample applications(2024)
- Determination of forage quality characteristics of some trigonella genotypes growing in meadow-pasture and natural vegetation of southeastern anatolia region(2024)