Electrical caracteristics of Ti/Si and Zr/Si junctions

Metal semiconductor junctions form the fundamental background of microelectronic andintegrated electronic devices. Researches have focused on the characteristics of metalsemiconductor junctions made by using transition metals since silicides at the interface havelow resistivity and they are not oxidized easily. However, there is still lack of study abouttransition metals/semiconductor junctions.In this study, junctions having either Ti or Zr thin film covering on crystal Si substrate havebeen compared in terms of their electrical properties. The Ti and Zr thin film coverings on n-type and p-type Si substrate have been made by using DC magnetron sputtering technique.Current-voltage and capacitance-voltage characteristics of the junctions have beeninvestigated experimentally. Moreover, parameters like Schottky barrier height, ideality factorand dopand density have been calculated. Also, energy gap has been calculated by measuringUV transmission for Si substrate and after the covering, types of crystal phases have beendetermined by making XRD analysis.After completing electrical measurements, these following calculations have been concluded:Ti/p-Si junction barrier height Фb(I-V)= 0,73 eV, Фb(C-V)= 0,90 eV and acceptor dopantNa=2,28x1013 cm-3 , Ti/n-Si junction barrier height Фb(I-V)= 0,68 eV, Фb(C-V)= 0,80 eVand donor density Nd=5,12x1011 cm-3, and Zr/p-Si junction barrier height Фb(I-V)= 0,83eV, Фb(C-V)=1,34 eV and acceptor dopant Na= 3,03x1013 cm-3. In addition Ti/Si junctionshas not shown photo sensitivity property. On the other hand, Zr/p-Si junction Schottky diodeproperty has increased proportionally with light. It is observed that Ti/n-Si, Ti/p-Si and Zr/p-Si have Schottky diode properties.Keywords: Ti/Si and Zr/Si junctions, Schottky diode, Ti5Si4.