Electrical characterization of metal-polymer-semiconductor (MIS) devices with trimethylolprophane triacrylate (TMPTA) interface
Is this your thesis?
This record came from a bulk archive import. If it’s yours, link it to your profile.
Abstract (EN)
In this study, current-voltage (I-V) and capacitance-voltage (C-V) analyzes of Metal-Polymer-Semiconductor (MPS) devices with Trimethylolpropane Triacrylate (TMPTA) Polymer interface were investigated at room temperature. By performing current-voltage (I-V) measurements of the Al/TMPTA/p-Si (MPS) structure under dark; Device parameters such as rectification ratio (RR), ideality factor (n), barrier height (ϕB) and series resistance (Rs) were determined. In addition, capacitance-voltage (C-V) and conductivity-voltage (G-V) measurements and other electrical parameters were determined. The results were compared with the literature and it was seen that the TMPTA photopolymer organic interfacial layer is a good candidate for fabrication of MPS devices.
Author
Mehmet Emin Özenç
How to Cite
Mehmet Emin Özenç (Master Thesis). Electrical characterization of metal-polymer-semiconductor (MIS) devices with trimethylolprophane triacrylate (TMPTA) interface, 2022, Batman University.
Keywords
License
Tüm Hakları Saklıdır
This work is shared under the specified license terms.
More theses from Batman University
- Population book no. 1810 of Cankiri district dated 1246 (1830-1831)(2025)
- The transcription and evaluation of Mardin district's population book registered with the number of 3736(2016)
- The effect of foreign direct investments on carbon dioxide emissions: The example of Turkey(2023)
- The mediating role of emotional well-being in the effect of physical environment quality, food quality, and service quality on revisit ıntention in restaurant businesses(2026)
- Trannscription and evaluation of the muslim population book of Karînâbâd Districk number 6640(2025)
- Diyarbakır center and its surroundings (ditricts) public medicine(2023)