Electrical characterization of metal-polymer-semiconductor (MIS) devices with trimethylolprophane triacrylate (TMPTA) interface

In this study, current-voltage (I-V) and capacitance-voltage (C-V) analyzes of Metal-Polymer-Semiconductor (MPS) devices with Trimethylolpropane Triacrylate (TMPTA) Polymer interface were investigated at room temperature. By performing current-voltage (I-V) measurements of the Al/TMPTA/p-Si (MPS) structure under dark; Device parameters such as rectification ratio (RR), ideality factor (n), barrier height (ϕB) and series resistance (Rs) were determined. In addition, capacitance-voltage (C-V) and conductivity-voltage (G-V) measurements and other electrical parameters were determined. The results were compared with the literature and it was seen that the TMPTA photopolymer organic interfacial layer is a good candidate for fabrication of MPS devices.