Electron And Magnetotransport Investıgatıon Of 2- Dimensional Electron Gas In Ultrathin Barrier Gan- Based Heterostructures

In this study, electron and magneto transport properties of 4 different ultrathin barrier AlInN/GaN and AlInN/AlN/GaN/AlN structures were investigated. Resistivities were measured at a temperature of 30 ? 300 K, Hall mobilities and Hall carrier densities were measured at the same temperature range with magnetic field intensities 0 ? 1.4 T. 2 ? dimensional electron gas (2DEG) carrier densities and mobilities are calculated from these measurements. Results of Hall measurements were used to investigate scattering mechanisms of each structure. Also, material related parameters named well width of the quantum well, correlation length and deformation potential were determined with the help of scattering analyses.