The investigation of temperature dependence of electrical characteristics of the Al/p-Si Schottky diodes with insulator layer

The study aims to obtain the main elektrical parameters in Al/p-Si Schottky diodes (SDs) whose insulator layers were prepared by the front surface of the Si wafer was exposed to air in sterile glass box at prolonged time at room temperature. Firstly, the Schottky barrier height ( ? B), ideality factor (n), interface state densities (Nss) and series resistance (Rs) of these diodes have been obtained from their experimental current-voltage (I-V), capacitance?voltage (C-V) and conductance-voltage (G/w-V) measurements. In addition, the energy distribution of Nss profiles for Al/p-Si SDs were determined from I-V data by taking the bias dependence of the effective barrier height ( ? e) into account at room temperature. Distributions of main diode parameters obtained from the forward bias I-V and reverse bias C-2 -V datas have been fitted by a Gaussian function. In addition, I-V characteristics of selected the sample Al/p-Si Schottky diode was measured in the temperature range of 80-300 K and information was obtained on the current transport mechanism of the diode.Experimental results show that a native insulator layer between metal and semiconductor, Nss, barrier inhomojenity and Rs play an important role in the main electrical parameters of Schottky diodes.