A new approach for semiconductor devices model parameters' extraction
2007
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Advisor: Yrd. Doç. Dr. Gürsel Düzenli
Abstract (EN)
Key Words: Semiconductors, Diode, BJT, Semiconductor Spice Models and Parameters Today most used electronic devices simulation program is SPICE. For this reason extraction of semiconductor model parameters truly and effectively is important. In this study,parameter extraction of model for diode and bjt that is referenced in SPICE program is made. Offered method for extraction of model?s parameters is easy to use, correctness of results are high and is fast for reaching results. For algorithm of parameter extraction method used information about semiconductors charecteristical datas. At the and of study a aquation that examines variation of parameters in all regions is offered. By using equation found region that paremeters are more active than other region are become more clear and using this variation parameters values are set. Result of using offered method inspite of the the fact that there is no any pre information about parameters, parameters value and also parameters active region determination is provided.
Author
Dr. Burhan Baraklı
Institution
How to Cite
Burhan Baraklı (Master Thesis). A new approach for semiconductor devices model parameters' extraction, 2007, Sakarya University.
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