Pecularities of plasma processes over semiconductor gas discharge system

In this study, non-thermal plasma process in a planar gas discharge system with Neon gas environment was studied experimentally at various interelectrode distances d and different inner diameters D of the electrode areas of the semiconductor cathode up to atmospheric pressure. The Current-Voltage Characteristics (CVC) and Light intensity-Voltage Characteristics of the gas discharge system with GaAs cathode have been studied in a wide range of the gas pressure p (15÷760 Torr). Experimental results which were obtained from Ne gas were compared with the results from air. Gas discharge light emission intensities decrease in air medium for p ? 220 Torr and decay towards atmospheric pressure. On the other hand, the highest gas discharge light emission intensity values were reached for Ne towards atmospheric pressure. Stable discharge regions and controllable working mode were identified. Obtaining Townsend discharge at atmospheric pressure when Ne used is one of the most important results. Also the conditions were underlined which semiconductor gas discharge structure (SGDS) is unstable. The presence of deep electronic levels of defects, called EL2 centers, results the N-type NDR of the material, caused to oscillations in current when a dc voltage of a high magnitude is applied to a GaAs photodetector. Possibilities regarding increase of gas discharge light emission intensity for SGDS were investigated.Breakdown potential (Ub) is decreased around 100 V by using dielectric microchannel dielectric spacer in gas discharger gap. Light intensity is multiplied three times in SGDS with Ne environment by using dielectric microchannel spacer. Optimal working conditions are determined for SGDS designed to convert infrared images to visible region. By using the infrared light to excite the semiconductor cathode of the system, we have shown that the uniform discharge light emission of the device with Ne in the gap can serve as a source of UV and visible light at atmospheric pressure.